Tag Archives: Toshiba

Plextor blog walks you through the design process for the PX-M5S SSD: better, faster, cheaper

Posted on August 13, 2012 by sleibson2

Plextor has just published an extremely interesting blog post that walks you through some of the high-level design decisions behind the company’s new PX-M5S SSD. According to the design goals, the prioritized objectives are: 1) speed 2) reliability 3) price … Continue reading →

Posted in NAND, ONFI, SSD, Toggle | Tagged , , , , , , | Leave a comment

Three Golliaths and a host of Davids meeting up on the storage battlefield. Who wins?

Posted on July 16, 2012 by sleibson2

If you want to read a short, interesting overview of the combined HDD/SSD storage battlefield, look no further than a new article on The Register’s Web site. The article, titled “Will the titans of storage decide to flash their bits?” … Continue reading →

Posted in Flash, HDD, Micron, Samsung, SSD | Tagged , , , , , , , | Leave a comment

SK Hynix places bet on third wannabe non-volatile memory technology, phase-change memory, with IBM

Posted on June 13, 2012 by sleibson2

When I was really young, I used to play a card game called “Pit” where you tried to corner the market on a particular commodity like oranges, sugar, soybeans, or corn. The game was based on the trading pits of … Continue reading →

Posted in Hynix, Memristor, MRAM, NAND, PCM | Tagged , , , , , , , , , , | 2 Comments

Toshiba launches family of thin 2.5-inch and mSATA SSDs based on 19nm Toggle NAND Flash

Posted on June 5, 2012 by sleibson2

Toshiba has just launched a new SSD family called the THNSNF series based on the company’s 19nm Toggle NAND Flash multi-level cell (MLC) devices. The SSDs are offered in capacities from 64 to 512Gbytes. All members of the family employ … Continue reading →

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SanDisk shows 128Gbit, 3-level cell NAND Flash memory chip at ISSCC. Is 20nm (or 19nm) here, so soon?

Posted on February 28, 2012 by sleibson2

I’ve already written about retired SanDisk CEO Eli Harari’s ISSCC keynote prediction that ReRAM/memristor technology would supplant DRAM and NAND Flash memory by the time the 11nm process node arrives. (See “SanDisk’s founder and retired CEO Eli Harari says that … Continue reading →

Posted in Flash, Memristor, NAND, ReRAM | Tagged , , , , , , | 1 Comment

The sky is falling! The sky is falling! Paper predicts the bleak future of SSDs and NAND Flash memory

Posted on February 21, 2012 by sleibson2

An interesting and disturbing paper titled “The Bleak Future of NAND Flash Memory” written by two researchers at the Department of Computer Science and Engineering at the University of California, San Diego, and one Microsoft employee uses current trends with … Continue reading →

Posted in 3D, Flash, Memcon, Memristor, Micron, MLC, MRAM, NAND, SSD | Tagged , , , , , , , , , , , | 3 Comments

Toshiba adds 4 and 8Gbit BENAND devices to its SmartNAND lineup

Posted on January 9, 2012 by sleibson2

Toshiba has just announced a new family of SLC (single-level cell) managed NAND Flash devices dubbed BENAND. The 24nm devices incorporate ECC so that the host processor need not perform that function, which saves time and simplifies the NAND Flash … Continue reading →

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