Tag Archives: ReRAM

Want to know why SK hynix is placing its bets on three different alternatives to DRAM and Flash?

Posted on August 27, 2012 by sleibson2

Last week at the Flash Memory Summit, Dr. Sung Wook Park spoke about memory. No surprise there, but there were several surprises in Park’s presentation. The first surprise popped up in the slide immediately following the keynote presentation’s title slide: … Continue reading →

Posted in 3D, DRAM, Flash, HDD, Hynix, Memristor, MRAM, NAND, PCM, ReRAM, SRAM, SSD | Tagged , , , , , , , | 3 Comments

SanDisk shows 128Gbit, 3-level cell NAND Flash memory chip at ISSCC. Is 20nm (or 19nm) here, so soon?

Posted on February 28, 2012 by sleibson2

I’ve already written about retired SanDisk CEO Eli Harari’s ISSCC keynote prediction that ReRAM/memristor technology would supplant DRAM and NAND Flash memory by the time the 11nm process node arrives. (See “SanDisk’s founder and retired CEO Eli Harari says that … Continue reading →

Posted in Flash, Memristor, NAND, ReRAM | Tagged , , , , , , | 1 Comment

Memcon 2012: Save the date—September 18, 2012 in Santa Clara CA

Posted on January 27, 2012 by sleibson2

The date’s official! The 2012 edition of Memcon—the conference devoted to all aspects of semiconductor memory design, manufacture, and use—will take place at the Santa Clara Convention Center on September 18, 2012. So put that date on your calendar now, … Continue reading →

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Elpida prototypes 50nm, 64Mbit, 10nsec Resistive RAM (ReRAM). 30nm production slated for 2013

Posted on January 25, 2012 by sleibson2

Elpida, the world’s third largest DRAM manufacturer, just announced successful development of a 64Mbit resistive RAM (ReRAM) prototype chip using a 50nm process technology. Two key specs for this prototype are a 10nsec write speed, similar to DRAM and orders … Continue reading →

Posted in DRAM, Flash, Memristor, NAND, ReRAM | Tagged , , , , , | 1 Comment