Tag Archives: PCM

The Economist covers PCM – must be something real

Posted on September 13, 2012 by sleibson2

I was surprised to see an article about phase-change memory (PCM) appear early this month in the well-respected British magazine The Economist. “Altered states” provides a good, basic introduction to PCM.

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Will the Apple iPhone 5 use PCM?

Posted on September 11, 2012 by sleibson2

An investment site called Seeking Alpha has published a bit of strange forensic research that leads it to claim that the Apple iPhone 5 that will be announced tomorrow employs phase-change memory (PCM). What clue led to this conclusion? It … Continue reading →

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IBM gets patent for hi-temp PCM (phase-change memory) cell structure

Posted on September 10, 2012 by sleibson2

Tom’s Hardware is reporting that IBM recently obtained a patent on specially formulated phase-change memory (PCM) that will operate above 150°C. This is a significant achievement because PCM has a problem with ambient thermal annealing. If the chip temperature goes … Continue reading →

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Want to know why SK hynix is placing its bets on three different alternatives to DRAM and Flash?

Posted on August 27, 2012 by sleibson2

Last week at the Flash Memory Summit, Dr. Sung Wook Park spoke about memory. No surprise there, but there were several surprises in Park’s presentation. The first surprise popped up in the slide immediately following the keynote presentation’s title slide: … Continue reading →

Posted in 3D, DRAM, Flash, HDD, Hynix, Memristor, MRAM, NAND, PCM, ReRAM, SRAM, SSD | Tagged , , , , , , , | 3 Comments

Want more details about the new Micron 1Gbit Phase-Change Memory / 512Mbit SDRAM device? Here are several

Posted on July 19, 2012 by sleibson2

Yesterday, Micron announced volume production of a new memory device containing one 1Gbit PCM (phase-change memory) die and one 512Mbit LPDDR2 SDRAM die. This morning, I had a conversation about this new device with Philippe Berge—Senior Director of the NOR, … Continue reading →

Posted in DDR, Flash, LPDDR2, Micron, NOR, PCM, Storage | Tagged , , , , , , , | Leave a comment

Micron announces volume production of PCM/DRAM multichip packaged memory

Posted on July 17, 2012 by sleibson2

Totally not expecting this. Today Micron announced high-volume availability of a multichip, packaged memory device that incorporates a 1Gbit PCM (Phase-Change Memory) and a 512Mbit LPDDR2 SDRAM. The PCM die is built with 45nm process technology. The multichip-packaged memory is … Continue reading →

Posted in DRAM, LPDDR2, Micron, PCM, SDRAM | Tagged , , , | 1 Comment

4th International Memory Workshop in Milan tackles all things non-volatile with respect to semiconductor memory. May 20-23

Posted on April 9, 2012 by sleibson2

You will need to travel to Milan, Italy to attend the 4-day intensive event devoted to non-volatile memory, which seems to be the exclusive topic for the 4th International Memory Workshop Symposia on VLSI Technology and Circuits covers latest STT-MRAM … Continue reading →

Posted in DRAM, Flash, Memristor, MRAM, NAND, ReRAM, Storage | Tagged , , , , | Leave a comment

ISQED: Who and what will win the Universal Memory Derby?

Posted on March 23, 2012 by sleibson2

Professor Cristophe Muller of Aix-Marseille University gave an excellent overview of non-volatile semiconductor memory as the third ISQED keynote this week. It’s a very good overview of today’s landscape and well worth discussing in a wider forum like this blog. … Continue reading →

Posted in DRAM, Flash, Memristor, Micron, MRAM, NAND, NOR, ReRAM, SDRAM | Tagged , , , , , , , , , , , | 4 Comments