Tag Archives: Multi-level cell

Some great analysis on SSD wear leveling and power consumption

Posted on September 17, 2012 by sleibson2

Some great analysis by Cullen Logan at Amazon.com appeared on LinkedIn over the weekend in response to my post “Are Enterprise SSDs a “bad” idea? Four tips and counter-tips for your consideration”: “To put some raw data out there, consider … Continue reading →

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Tweaktown review of 1.6Tbyte SMART Storage Optimus SSD reveals a few secrets. Wanna see them?

Posted on August 27, 2012 by sleibson2

Tweaktown.com attended last week’s Flash Memory Summit and has published some great photos of the internals of the 2.5-inch SMART Storage 1.6Tbyte Optimus SSD. The drive has dual SAS ports with accompanying specs of 1Gbps sequential read and 500MGbps sequential … Continue reading →

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Want to know Rado Danilak’s and Skyera’s plan for total enterprise-class SSD world domination?

Posted on August 23, 2012 by sleibson2

This week, I reported on a new high-end, high-performance 44Tbyte SSD for data centers and server farms from Skyera. (See “44Tbyte Skyera Skyhawk SSD employs Everspin MRAM as write cache” and “How Skyera developed the 44Tbyte, enterprise-class Skyhawk SSD from … Continue reading →

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Flash memory endurance, multi-level cells, and process technology

Posted on August 15, 2012 by sleibson2

I’ve been following an interesting discussion about Flash memory endurance, multi-level cells, and process technology in the LinkedIn Solid State Storage Group. Yesterday, The Memory Guy Jim Handy stepped in with this comment: “Flash endurance is the result of disruptions … Continue reading →

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Are Enterprise SSDs a “bad” idea? Four tips and counter-tips for your consideration.

Posted on August 8, 2012 by sleibson2

I ran across a commentary on the Kaminerio Web site, “Is SSD Really a Bad Idea? BE CAREFUL WHOSE ADVICE YOU TAKE” by Eyal Markovich, which is a reaction to a blog posting by Phil Goodwin on the SearchSolidStateStorage.com Web … Continue reading →

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BIWIN America introduces 12x20mm e-MMC SSDs with on-chip controller, power-on boot, explicit sleep mode

Posted on April 18, 2012 by sleibson2

BIWIN America has just announced a “single-chip” SSD device employing the e-MMC interface. The device is available in capacities from 2 to 64Gbytes, all packed into a 169-ball BGA package measuring 12x20x1mm. An integral SSD controller provides built-in BCH error … Continue reading →

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Low-cost Intel 330 series SSDs sport SandForce SF-2281 SSD Controller

Posted on April 17, 2012 by sleibson2

According to this extremely informative article on the Anandtech.com site, Intel’s just-released 330 series SSDs push Intel into the low-cost SSD zone using the SandForce SF-2281 SSD controller. Apparently, Intel’s 520 SSD series also employs this controller, but the use … Continue reading →

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Interview with Whiptail’s CTO James Candelaria demonstrates how SSD controllers can greatly improve NAND Flash endurance by managing write amplification

Posted on April 9, 2012 by sleibson2

As NAND Flash geometries continue to shrink, device endurance specs have suffered, which is a significant challenge when using these devices in SSDs. This interview with Whiptail’s CTO James Candelaria discusses how his company’s approach to buffering writes in SSD … Continue reading →

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SMART Storage Systems’ Optimus Ultra SSD taps consumer-grade NAND Flash memory with magic wand named Guardian to make enterprise-class SSD

Posted on February 23, 2012 by sleibson2

A lead from Computerworld put me onto the announcement by SMART Storage Systems of a new enterprise-class Optimus Ultra SSD based on consumer-grade MLC (multi-level cell) NAND Flash devices. Using consumer-grade silicon to make this drive cuts the OEM cost … Continue reading →

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Flash Memory Summit 2012: Call for presentations

Posted on February 16, 2012 by sleibson2

Planning is now underway for the Flash Memory Summit 2012, which will be held in Santa Clara, CA in August. There’s no better show devoted exclusively to NAND Flash semiconductor memory and applications of NAND Flash—particularly SSDs. The organizers have … Continue reading →

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Hitachi Global Storage unleashes 2.5-inch, 100 to 400Gbyte enterprise SSDs with Intel 25nm SLC NAND Flash

Posted on February 10, 2012 by sleibson2

This week, Hitachi GST (Global Storage Technology) announced a new line of 2.5-inch, 100 to 400Gbyte enterprise SSDs, called the Ultrastar SSD400S.B, based on Intel 25nm SLC (single level cell) NAND Flash devices. The endurance specs of the Flash devices … Continue reading →

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Can MLC NAND Flash work in enterprise SSDs? Yes, with the right storage algorithms says Seagate

Posted on February 6, 2012 by sleibson2

MLC (multi-level cell) NAND Flash memories provide 2x or 3x the storage for slightly more than the cost of SLC (single-level cell) NAND Flash memories. Consequently, there’s a big economic case to be made for MLC NAND Flash devices in … Continue reading →

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