Tag Archives: ISSCC

SanDisk shows 128Gbit, 3-level cell NAND Flash memory chip at ISSCC. Is 20nm (or 19nm) here, so soon?

I’ve already written about retired SanDisk CEO Eli Harari’s ISSCC keynote prediction that ReRAM/memristor technology would supplant DRAM and NAND Flash memory by the time the 11nm process node arrives. (See “SanDisk’s founder and retired CEO Eli Harari says that … Continue reading

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Operational DDR4 SDRAM prototypes appear at ISSCC

As reported this week by several Web sites including Techeye.net, Samsung and Hynix both demonstrated working prototypes of DDR4 SDRAM at the ISSCC conference in San Francisco this week. The Samsung and Hynix DDR4 memories were manufactured in 30nm and … Continue reading

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