Tag Archives: HP

Wired Magazine: HP Memristors Will Reinvent Computer Memory “by 2014”

Posted on July 12, 2012 by

Caleb Garling at Wired.com just posted an article predicting that memristors will remake the semiconductor memory landscape by 2014, based on the comments made Research Fellow Stan Williams at a recent roundtable discussion on nanotechnology sponsored by the Kavli Foundation. … Continue reading →

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ARM, HP, and SK hynix join Hybrid Memory Cube Consortium (HMCC). First spec due by end of year

Posted on June 28, 2012 by

Add ARM, HP, and SK hynix to the growing list of companies in the Hybrid Memory Cube Consortium (HMCC). The three new members join the original founding companies, Micron and Samsung, along with Altera, IBM, Microsoft, Open-Silicon, and Xilinx plus … Continue reading →

Posted in 3D, DRAM, HMC, Hybrid Memory Cube, Hynix | Tagged , , , , , , | 1 Comment

ISQED: Who and what will win the Universal Memory Derby?

Posted on March 23, 2012 by

Professor Cristophe Muller of Aix-Marseille University gave an excellent overview of non-volatile semiconductor memory as the third ISQED keynote this week. It’s a very good overview of today’s landscape and well worth discussing in a wider forum like this blog. … Continue reading →

Posted in DRAM, Flash, Memristor, Micron, MRAM, NAND, NOR, ReRAM, SDRAM | Tagged , , , , , , , , , , , | 4 Comments

Elpida prototypes 50nm, 64Mbit, 10nsec Resistive RAM (ReRAM). 30nm production slated for 2013

Posted on January 25, 2012 by

Elpida, the world’s third largest DRAM manufacturer, just announced successful development of a 64Mbit resistive RAM (ReRAM) prototype chip using a 50nm process technology. Two key specs for this prototype are a 10nsec write speed, similar to DRAM and orders … Continue reading →

Posted in DRAM, Flash, Memristor, NAND, ReRAM | Tagged , , , , , | 1 Comment

You say “to-may-to” and I say “to-mah-to.” So how do you say “memristor”? Part 2

Posted on January 20, 2012 by

A couple of days ago, I noted that Bryon Moyer at Electronic Engineering Journal had interviewed me and quoted me about the recent brush up over the term “memristor” in his article “A Memristor By Any Other Name?”  Moyer wrote: … Continue reading →

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You say “to-may-to” and I say “to-mah-to.” So how do you say “memristor”?

Posted on January 18, 2012 by

Bryon Moyer at Electronic Engineering Journal and I had a discussion a couple of weeks ago about memristors, real and ideal, and resistive RAM. Is there a difference? Does it matter? What is it we’re really looking for, a “true” … Continue reading →

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