IBM gets patent for hi-temp PCM (phase-change memory) cell structure

Tom’s Hardware is reporting that IBM recently obtained a patent on specially formulated phase-change memory (PCM) that will operate above 150°C. This is a significant achievement because PCM has a problem with ambient thermal annealing. If the chip temperature goes too high, then the phase-change memory cells will start to self erase as they change from their amorphous state to a crystalline state. This was not a problem for the recently announced LPDDR2 PCM/SDRAM combo device from Micron. (See “3D Thursday: Micron stacks Phase-Change Memory and SDRAM”) I know it’s not a problem for the device’s 0-85°C temperature range because I asked about that problem. Operating at more than 150°C is yet another story entirely.

Advertisements

About sleibson2

EDA360 Evangelist and Marketing Director at Cadence Design Systems (blog at http://eda360insider.wordpress.com/)
This entry was posted in PCM, Storage and tagged , , . Bookmark the permalink.

Leave a Reply

Fill in your details below or click an icon to log in:

WordPress.com Logo

You are commenting using your WordPress.com account. Log Out / Change )

Twitter picture

You are commenting using your Twitter account. Log Out / Change )

Facebook photo

You are commenting using your Facebook account. Log Out / Change )

Google+ photo

You are commenting using your Google+ account. Log Out / Change )

Connecting to %s