Samsung starts to sample 16Gbyte DDR4 LRDIMMs using 30nm-class DDR4 memory chips

Today, Samsung announced that it has started to sample 16Gbyte DDR4 SDRAM RDIMMs (registered DIMMs) based on its 30nm-class DDR4 SDRAM chips. Last month, the company announced sampling of 8 and 16Gbyte DDR4 modules and a 2Gbyte DDR4 module was announced way back in December, 2010.

However, Samsung’s plan is to go into volume production next year (2013) and to migrate to 20nm-class devices as soon as practical to increase DDR4 performance, boost DIMM capacity to 32Gbytes, and further cut power consumption.

If you have not been following the JEDEC DDR4 standard’s progress, you can find some quick overviews here  “The DDR4 SDRAM spec and SoC design. What do we know now?” and here “Memory to processors: “Without me, you’re nothing.” DDR4 is on the way.

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About sleibson2

EDA360 Evangelist and Marketing Director at Cadence Design Systems (blog at http://eda360insider.wordpress.com/)
This entry was posted in DDR4, Samsung and tagged , , . Bookmark the permalink.

2 Responses to Samsung starts to sample 16Gbyte DDR4 LRDIMMs using 30nm-class DDR4 memory chips

  1. Pingback: Want the latest scoop on DDR4 DRAM? Here are some technical answers from the Micron team of interest to IC, system, and pcb designers | Denali Memory Report

  2. Pingback: How ya gonna’ control that DDR4 SDRAM next year? The 28nm answer. | Denali Memory Report

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