Symposia on VLSI Technology and Circuits covers latest STT-MRAM developments

Session 7 of the 2012 Symposia on VLSI Technology and Circuits is all about Spin-Torque-Transfer Magnetic RAM (STT-MRAM), one of the several technologies hoping to challenge NAND Flash memory for the top spot in the non-volatile memory hierarchy. Five presentations are scheduled from Grandis, LEAP, NEC, Renesas, Tohoku University, Kyoto University, and KAIT. The event takes place from June 12-15 in Honolulu, Hawaii. Session 7 takes place on June 12.

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About sleibson2

EDA360 Evangelist and Marketing Director at Cadence Design Systems (blog at http://eda360insider.wordpress.com/)
This entry was posted in Flash, MRAM, NAND and tagged , , . Bookmark the permalink.

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