Session 7 of the 2012 Symposia on VLSI Technology and Circuits is all about Spin-Torque-Transfer Magnetic RAM (STT-MRAM), one of the several technologies hoping to challenge NAND Flash memory for the top spot in the non-volatile memory hierarchy. Five presentations are scheduled from Grandis, LEAP, NEC, Renesas, Tohoku University, Kyoto University, and KAIT. The event takes place from June 12-15 in Honolulu, Hawaii. Session 7 takes place on June 12.
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