Samsung packages 4Gbytes of NAND Flash with LPDDR2 DRAM for smartphone and other embedded applications

Samsung has announced that it has started volume production of a combined NAND Flash/DRAM “embedded multichip module” (eMCP). The module combines 30nm-class LPDDR2 DRAM chips (packaged capacities of 256, 512, or 768 Mbytes) with 4Gbytes of 20nm-class NAND Flash in one surface-mount package. The target market for this device is the smartphone market but many other embedded applications can also make use of a device like this. Samsung has been offering such modules for a while. For example, the Denali Memory Report covered the introduction of a similar device that combined DRAM and phase-change memory (PCM) back in May, 2010.

About sleibson2

EDA360 Evangelist and Marketing Director at Cadence Design Systems (blog at
This entry was posted in DRAM, LPDDR2, NAND and tagged . Bookmark the permalink.

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